Material Growth

We are growing a wide selection of semiconducting TMDC monoloayers (MoS2, WS2, MoSe2 and WSe2) using CVD, MOCVD and MBE. One of our favorite growth substrates is sapphire on which we can grow high-quality MoS2 with high mobility and good control over lattice orientation.

Representative key papers from our group

  1. Z. Wang, M. Tripathi, Z. Golsanamlou, P. Kumari, G. Lovarelli, F. Mazziotti, D. Logoteta, G. Fiori, L. Sementa, G. M. Marega, H. G. Ji, Y. Zhao, A. Radenovic, G. Iannaccone, A. Fortunelli, A. Kis. Substitutional p-Type Doping in NbS2-MoS2 Lateral Heterostructures Grown by MOCVD. Advanced Materials, 2209371 (2023); DOI:10.1002/adma.202209371
  2. Y. Zhao, M. Tripathi, K. Čerņevičs, A. Avsar, H. G. Ji, J. F. Gonzalez Marin, C.-Y. Cheon, Z. Wang, O. V. Yazyev, A. Kis. Electrical Spectroscopy of Defect States and Their Hybridization in Monolayer MoS2. Nat Commun 14, 44 (2023); DOI:10.1038/s41467-022-35651-1.
  3. G. Migliato Marega, Y. Zhao, A. Avsar, Z. Wang, M. Tripathi, A. Radenovic, A. Kis. Logic-in-Memory Based on an Atomically Thin Semiconductor. Nature 587, 72 (2020); DOI:10.1038/s41586-020-2861-0
  4. Kim, H., D. Ovchinnikov, D. Deiana, D. Unuchek, A. Kis. Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2 Monolayers by Alkali Metal Halides.
    Nano Lett. (2017); DOI:10.1021/acs.nanolett.7b02311.
  5. Chen, M.-W., D. Ovchinnikov, S. Lazar, M. Pizzochero, M. B. Whitwick, A. Surrente, M. Baranowski, O. L. Sanchez, P. Gillet, P. Plochocka, O. V. Yazyev, A. Kis. Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
    ACS Nano (2017); DOI:10.1021/acsnano.7b02726.
  6. Dumcenco, D., D. Ovchinnikov, K. Marinov, P. Lazić, M. Gibertini, N. Marzari, O. L. Sanchez, Y.-C. Kung, D. Krasnozhon, M.-W. Chen, S. Bertolazzi, P. Gillet, A. Fontcuberta i Morral, A. Radenovic, A. Kis. Large-Area Epitaxial Monolayer MoS2.
    ACS Nano 9, 4611–4620 (2015); DOI:10.1021/acsnano.5b01281.