Our mechanical measurements have shown for the first time that MoS2 has a high in-plane stifness, comparable to that of stainless steel and that it can withstand high degrees of mechanical deformation, with strain at breaking of up to 11%. This gives the possibility of using strain to modulate the electronic properties of MoS2 and other TMDCs and could result in nanoscale strain gauges.
Representative key papers from our group
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Bertolazzi, S., J. Brivio, A. Kis. Stretching and Breaking of Ultrathin MoS2.
ACS Nano 5, 9703–9709 (2011); DOI:10.1021/nn203879f. -
Manzeli, S., A. Allain, A. Ghadimi, A. Kis. Piezoresistivity and Strain-Induced Band Gap Tuning in Atomically Thin MoS2.
Nano Letters 15, 5330–5335 (2015); DOI:10.1021/acs.nanolett.5b01689. -
Benameur, M. M., F. Gargiulo, S. Manzeli, G. Autès, M. Tosun, O. V. Yazyev, A. Kis. Electromechanical Oscillations in Bilayer Graphene
Nature Communications 6, 8582 (2015); DOI:10.1038/ncomms9582.